![]() ![]() VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 ΩĭRAIN − SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ![]() Stresses exceeding those listed in the Maximum Ratings table may damage the device. Replace Multiple NPN Digital Transistors with One DMOS FETĭrain−Source Voltage, Power Supply VoltageĮlectrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF/1500 Ω).Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits.Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.įeatures This device has been designed especially for low voltage applications as a replacement for digital transistors. This very high density process is especially tailored to minimize on−state resistance. ![]() This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. ![]()
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